Coulomb correlations and concentration-unbalanced phenomena in semiconductors

The slightly alloyed and disordered semiconductors were investigated as well as the surface layers of the semiconductors with the aim of the calculation of the self-matched electron spectrum and distribution of potential in the vicinity of the surface of semiconductor as well as with the aim of computation of the structure of the impurity zone and fluctuation potential in 2D and 3D semiconductors and study of the concentration-unbalanced phenomena. During the investigation the methods of theoretical physics (investigation of the Schrodinger, adiabatic and Maxwell equations) were used. As a result the models, describing the coulomb interactions and fluctuation potentials in the semiconductors and surface layers, were developed. The photoconduction in the model of "distorted zones" was investigated. Several modifications of the method of thermostimulated excitation were suggested. The effect of "negative density" and oscillation of longitudinal conduction for the surface impurity zone was predicted. The structure of the impurityzone of the slightly alloyed semiconductor was calculated. The results obtained may be used in the physics of semiconductors and physics of surface layers ofthe semiconductorsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio