Conductivity perculiarities on admixtures of non-compensated silicon

The purpose of the research is to investigate dependences on the conductivity on admixtures of non-compensated silicon upon temperature of the electrical and magnetic fields. In has been shown, that the D(--zone conductivity appaers by means of a threshold way. A new mechanism of a sudden conductivity activation has been discovered, molecular complexes are revealed in the structure of an admixture zone of non-compensated material. The main results of the investigation should be taken into consideration at the development of low-temperature infrared radiation receiversAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio