Concentration effects in plasms of cd_xhg_1_-_xte/cdte heterostructures

The paper is concerned with the zone-variable epitaxial structures of composition Cd_xHg_1_-_xTe/CdTe (x=0,2 divide 0,3). The aim is to searchithe concentration control methods of charge carriers in narrow-zone epitaxial films CdHgTe, to perform the complex investigations of effects stipulated by concentration phenomena in Cd_xHg_1_-_x_T_e_/_C-d_T_e hetero structures and to create the new types of IR optoelectron devices on their base. The basic laws of finite element method have been established; the new effect of arising negative differential conductivity of N-type and screw instability in zone-variable structures Cd_xHg_1_-_xTe/CdTe have been investigated. The electroluminescence of zone-variable semiconductors arising at current flow through heterostructures in direction changing width of the forbidden zone has been investigated. The new methods for determining the important parameters of narrow-zone epitaxipal films of life-time, speed of surface recombination, concentration of non-compensated addition, width gradient of forbidden zone. The new semiconductor devices have been developed: emitters of variable contrast, optoelectron transducers of magnetic field, current radie-frequency oscillatorsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio