Perculiarities of microdefects in gallium arsenide revealed by means of diffusion scattering of x-rays

The paper is concerned with monocrystals of gallium arsenide grown by the Chokhralsky method and horizontal-directed crystallization. In the result of the research a method to determine concentration of microdefects in crystals according to the absolute value of the diffusion scattering intensity has been developed. For the first time microdefects in non-alloyed and alloyed monocrystals of gallium arsenide which are not revealed by means of electron microscopy have been discovered, their model has been constructed, parameters have been determined. A hypothesis of the dependence of microdefect type in gallium arsenide upon the concentration of free electrons in a crystal has been offered. A mechanism of the formation of microdefects, as coagulation of excessive internodal atoms of gallium and arsenic in the single-phase range of the phase diagram has been describedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio