INFLUENCE OF THERMAL TREATMENTS IN HYDROGEN ON EVOLUTION OF ADMIXTURE-DEFECT SUBSYSTEM OF SILICON

The investigation and development of methods for the management of parameters of an admixture-defect subsystem of silicon and the behaviour of an ionic-implanted boron with the help of thermal treatments in hydrogen are the aim of the paper. As a result parameters of technological regimes, under which an admixture migrates to a surface, have been estiamted for the first time on the base of the equation solution. The effect of the boron migration to a surface in the process of thermal treatment in hydrogen has been confirmed experimentally. An effect of the near-surface field peeling from large dislocation loops has been detected. The tecnology of the obtaining of super-thin p-n transitions and the method of the peeling of near-surface layers of silicon have been introduced into operation. The paper results may find their field of application in physics of semiconductors, tecnology of microelectronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio