Etude des proprietes electroniques des diodes Schottky GaP(110) n/Al ou Ag en relation avec celles de la surface et de l'interface : effet d'une couche intercalaire d'antimoine et du recuit

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

von der Emde, M.
Zahn, D. R.T.
Schultz, Ch
Evans, D. A.
Horn, K.

June 1993

Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electric...

Electrical Analysis of Ultrashallow Junctions

Qi, L. (author)

July 2010

Electrical analysis techniques are introduced to determined the type of the diodes, whether they are...

Contribution des proprietes de surfaces reelles et de la nature du metal aux caracteristiques electriques des diodes Schottky: Au, Ag et In/n-GaP

Boumediene, Mohamed

January 1990

SIGLEINIST T 75812 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Etude de diodes Schottky elaborees a partir de polymeres electroactifs

Boudemagh, Farouk

January 1986

SIGLECNRS T 59949 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Formation de l'interface métal/InP et de diodes Schottky sur InP

A. Ismail
J.M. Palau
L. Lassabatère

January 1984

A.E.S. and mainly Kelvin method are used to study chemical (100) and cleaved (110) InP surfaces and ...

Sur l'analyse des proprietes physico-chimiques et electroniques de la surface InP (110) : contribution aux proprietes de l'interface Metal-InP (110)

Dumas, Michel

January 1987

SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Diodes Schottky sur silicium amorphe hydrogene : caracterisations, densite d'etats localises

Abachi, Tahar

January 1987

SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices

Demir K.Ç.
Coşkun C.
Kurudirek S.V.
Öz S.
Aydo?an Ş.
Biber M.

January 2016

1st International Physics Conference at the Anatolian Peak, IPCAP 2016 -- 25 February 2016 through 2...

Schottky barrier heights at polar metal/semiconductor interfaces

Berthod, Christophe
Binggeli, N.
Baldereschi, A.

January 2003

Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights ...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Schottky-barriers for clean, etched and reactive metal-semiconductor junctions

E. Louis
F. Flores

January 1981

A unifying simple model for clean, etched and reactive metal-semiconductor junctions is proposed. Fo...

LES ÉTATS DE SURFACE DANS LES SEMICONDUCTEURSMÉTHODES D'INVESTIGATION

J. GROSVALET

L'existence de niveaux d'énergies à la surface des semiconducteurs, niveaux situés dans la bande int...

Schottky-barriers for clean, etched and reactive metal-semiconductor junctions

E. Louis
F. Flores

January 1981

A unifying simple model for clean, etched and reactive metal-semiconductor junctions is proposed. Fo...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

von der Emde, M.
Zahn, D. R.T.
Schultz, Ch
Evans, D. A.
Horn, K.

June 1993

Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electric...

Electrical Analysis of Ultrashallow Junctions

Qi, L. (author)

July 2010

Electrical analysis techniques are introduced to determined the type of the diodes, whether they are...

Contribution des proprietes de surfaces reelles et de la nature du metal aux caracteristiques electriques des diodes Schottky: Au, Ag et In/n-GaP

Boumediene, Mohamed

January 1990

SIGLEINIST T 75812 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Etude de diodes Schottky elaborees a partir de polymeres electroactifs

Boudemagh, Farouk

January 1986

SIGLECNRS T 59949 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Formation de l'interface métal/InP et de diodes Schottky sur InP

A. Ismail
J.M. Palau
L. Lassabatère

January 1984

A.E.S. and mainly Kelvin method are used to study chemical (100) and cleaved (110) InP surfaces and ...

Sur l'analyse des proprietes physico-chimiques et electroniques de la surface InP (110) : contribution aux proprietes de l'interface Metal-InP (110)

Dumas, Michel

January 1987

SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Diodes Schottky sur silicium amorphe hydrogene : caracterisations, densite d'etats localises

Abachi, Tahar

January 1987

SIGLECNRS T Bordereau / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices

Demir K.Ç.
Coşkun C.
Kurudirek S.V.
Öz S.
Aydo?an Ş.
Biber M.

January 2016

1st International Physics Conference at the Anatolian Peak, IPCAP 2016 -- 25 February 2016 through 2...

Schottky barrier heights at polar metal/semiconductor interfaces

Berthod, Christophe
Binggeli, N.
Baldereschi, A.

January 2003

Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights ...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Schottky-barriers for clean, etched and reactive metal-semiconductor junctions

E. Louis
F. Flores

January 1981

A unifying simple model for clean, etched and reactive metal-semiconductor junctions is proposed. Fo...

LES ÉTATS DE SURFACE DANS LES SEMICONDUCTEURSMÉTHODES D'INVESTIGATION

J. GROSVALET

L'existence de niveaux d'énergies à la surface des semiconducteurs, niveaux situés dans la bande int...

Schottky-barriers for clean, etched and reactive metal-semiconductor junctions

E. Louis
F. Flores

January 1981

A unifying simple model for clean, etched and reactive metal-semiconductor junctions is proposed. Fo...

Metal/III-V diodes engineered by means of Si interlayers: interface reactions versus local interface dipoles

Bonanni, B.
Orani, D.
Lazzarino, M.
Rubini, S.
Franciosi, A.

January 2001

We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...

Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contacts

von der Emde, M.
Zahn, D. R.T.
Schultz, Ch
Evans, D. A.
Horn, K.

June 1993

Schottky barrier formation for metals on p-GaP(110) has been systematically investigated by electric...

Electrical Analysis of Ultrashallow Junctions

Qi, L. (author)

July 2010

Electrical analysis techniques are introduced to determined the type of the diodes, whether they are...

Etude des proprietes electroniques des diodes Schottky GaP(110) n/Al ou Ag en relation avec celles de la surface et de l'interface : effet d'une couche intercalaire d'antimoine et du recuit

Abstract

Extracted data

Etude des proprietes electroniques des diodes Schottky GaP(110) n/Al ou Ag en relation avec celles de la surface et de l'interface : effet d'une couche intercalaire d'antimoine et du recuit

Abstract

Extracted data

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