Add to ORKGFor simulation of gas sensitive metal oxide layers on electron device simulator was modified by equations describing chemical interaction between gas and sensitive layer. So the whole sensor including transducer part can be simulated and optimized. A significant response on external electric field and grain size was obtained. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(59,18) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman
In the project 'Technological further development of oxide based semiconductor gas-sensors for new a...
The aim of this paper is to explain to young students why chemoresistive metal oxide semiconductors ...
It is known, that by integration of different devices, (like transistors with different cross-sensiv...
In this paper, an electrically controlled metal oxide gas sensor designed with PROSA-CHEM is introdu...
Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism ...
Abstract: Gas ionization sensor (GIS), made of two parallel plates, works on measuring the breakdown...
The use of semiconducting metal-oxide (MOX) based gas sensors in demanding applications such as clim...
Semiconducting oxide gas sensors often bases on structures unstable over time and presents always lo...
Gas ionization sensor (GIS), made of two parallel plates, works on measuring the breakdown voltage o...
A measurement system designed for characterizing resistive metal oxide sensors based on novel materi...
A measurement system designed for the characterisation of chemorestive sensors based on novel mater...
The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology stil...
With the development of engineering industry, combustible and toxic gases monitoring and sensing are...
In this paper, an innovative methodology aimed at improving the development of novel gas...
The adsorption of gas molecules on MOS (metal-oxide-semiconductor) structure changes the work functi...
In the project 'Technological further development of oxide based semiconductor gas-sensors for new a...
The aim of this paper is to explain to young students why chemoresistive metal oxide semiconductors ...
It is known, that by integration of different devices, (like transistors with different cross-sensiv...
In this paper, an electrically controlled metal oxide gas sensor designed with PROSA-CHEM is introdu...
Abstract In recent years, finite element analysis is increasingly adopted to simulate the mechanism ...
Abstract: Gas ionization sensor (GIS), made of two parallel plates, works on measuring the breakdown...
The use of semiconducting metal-oxide (MOX) based gas sensors in demanding applications such as clim...
Semiconducting oxide gas sensors often bases on structures unstable over time and presents always lo...
Gas ionization sensor (GIS), made of two parallel plates, works on measuring the breakdown voltage o...
A measurement system designed for characterizing resistive metal oxide sensors based on novel materi...
A measurement system designed for the characterisation of chemorestive sensors based on novel mater...
The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology stil...
With the development of engineering industry, combustible and toxic gases monitoring and sensing are...
In this paper, an innovative methodology aimed at improving the development of novel gas...
The adsorption of gas molecules on MOS (metal-oxide-semiconductor) structure changes the work functi...
In the project 'Technological further development of oxide based semiconductor gas-sensors for new a...
The aim of this paper is to explain to young students why chemoresistive metal oxide semiconductors ...
It is known, that by integration of different devices, (like transistors with different cross-sensiv...