Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data transmission systems has been designed, realised by the use of the IAF GaAs E/D-HEMT technology [2], and successfully utilised in system demonstrators by the project partner Lucent Technologies. The chip set comprises 2:1 and 4:1 multiplexers, a modulator driver, an optical receiver for 1.3 #mu#m up to 1.55 #mu#m wavelength, a limiting amplifier, a data decision circuit, a clock recovery circuit and 1:2 as well as 1:4 demultiplexers. Additionally a data decorrelator has been developed and realised for the project partner Lucent Technologies, to make four synchronous 10 Gbit/signals available for transmission experiments. Within the project the dat...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
The main goals were the development of an integration technology for the fabrication of an integrate...
During the development of the demonstrator for 40 Gbit/s transmission theoretical work and simulatio...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
Target of the project was the development of a low cost optoelectronic transceiver for bidirectional...
During the last years, the optical data communication has become a key technologies. Conventional ne...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
According to the specifications of the project partner Alcatel SEL the IAF has developed, produced a...
This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
The paper presents the development of MMIC GaAs tran-simpedance amplifiers for optical systems, carr...
Transistors with transit frequencies beyond 100 GHz, demonstration of quantum devices, development o...
Telecommunications play a crucial role in our daily lives, not only because of their significance in...
Face à l augmentation constante du trafic lié notamment à Internet, la demande de capacité dans les ...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
The main goals were the development of an integration technology for the fabrication of an integrate...
During the development of the demonstrator for 40 Gbit/s transmission theoretical work and simulatio...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed, manufactured a...
Target of the project was the development of a low cost optoelectronic transceiver for bidirectional...
During the last years, the optical data communication has become a key technologies. Conventional ne...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
According to the specifications of the project partner Alcatel SEL the IAF has developed, produced a...
This contribution presents a new set of digital ICs dedicated to optical fibre links, realised using...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
The paper presents the development of MMIC GaAs tran-simpedance amplifiers for optical systems, carr...
Transistors with transit frequencies beyond 100 GHz, demonstration of quantum devices, development o...
Telecommunications play a crucial role in our daily lives, not only because of their significance in...
Face à l augmentation constante du trafic lié notamment à Internet, la demande de capacité dans les ...
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. ...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
The main goals were the development of an integration technology for the fabrication of an integrate...