Entwicklung und Optimierung integrierbarer Schottkydioden fuer die Detektion im Submm-Wellenlaengenbereich Abschlussbericht

During the course of the project integrable Schottky barrier diodes for submillimeter-wave applications have been developed and fabricated. Recently whisker contacted diodes are used almost exclusively in this frequency range. The prospective of whisker contacted structures is limited due to the lack of integration concepts. Therefore, a big challenge is to make available a planar, integrable structure offering new flexibility for submillimeter-wave applications. A novel structure, the quasivertical Schottky diode, has been investigated carefully during this project. The impact of structural dimensions on parasitics has been investigated using electromagnetic simulation tools. We could extract design roles out of this simulation work. Necessary technological developments have been developed and optimised. Especially fabrication processes for very small via-hole metalisation and an air-bridge technology for small (widths #propor to#4 #mu#m) and high (4-5 #mu#m) bridges have been established. Several different mixer diodes have been fabricated with characteristic parameters comparable to whisker contacted Schottky diodes. Cut-off frequencies up to 7.9 THz have been achieved. These devices can be used in submillimeter-wave applications. The developed technologies can be used for the development of integrated receivers. (orig.)SIGLEAvailable from TIB Hannover: F98B1097 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany); Deutsche Agentur fuer Raumfahrtangelegenheiten (DARA) GmbH, Bonn (Germany)DEGerman