Optimierung von Hochleistungs-Laserdioden Abschlussbericht

The goal of the project was to develop high-power laser diodes in cooperation between the University of Jena and a group at the Ioffe-Institute St. Petersburg under the leadership of D. V. Evtikhiev. The basic technology for the growth of laser diodes was the solid source molecular beam epitaxy. The main work was done at the Ioffe-Institute in St. Petersburg. The processing and the measurement of laser diodes was also done at the Ioffe-Institute. The following results was developed: Broad area laser diodes with a 100 #mu#m wide and 1.1 mm long laser stripe show an optical output power of 1.0 W cw at current of 1.5 A and an emission wavelength of 810 nm. Broad area laser diodes with a 100 #mu#m wide laser stripe show an optical output power of 9.5 W cw at current of 9 A and an emission wavelength of 950 nm. The extrapolated life time of laser diodes with 950 nm wavelength at output power of 1 W cw is 3000 h at a temperature of 25 C. The technologies developed at the Ioffe-Institute will be transfered in the next step to the University of Jena to use it later on for the producing of high-power laser diodes. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(84,16) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman