Modern communication systems require complex receivers. Examples are C- and X-band radar-receivers and low-noise X-band Sat-TV convertors, as well as K-band broadband ICs. First, sub-circuits of corresponding multifunction-ICs were designed, fabricated and measured. Then these were combined to result in complex 1-chip-MMICs, integrating all functions in one single die. This allows for low cost equipment design. The circuit design is based on aspects of performance, manufacturability, and cost. MESFET- and HEMT-technology were used in parallel for comparison. The low cost ion-implanted FETs use gate lengths of 0.5 #mu#m, the HEMTs on molecular beam epitaxial layers use 0.25 #mu#m gate lengths. Specific techniques and very compact designs wer...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
A technology based on GaAs MESFET and on GaAs heterobipolar transistors (HBT) was developed for mono...
The technology towards a stable 0.5 #mu#m GaAs-MESFET process has been developed and applied to diff...
Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuit...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
In this paper a possible implementation of digital circuits in a MMIC SAGFET/SAGHEMT technology is d...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is ne...
This study is embedded in the research program 'III-V-Electronics, Integrated Circuits for Highest S...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
A technology based on GaAs MESFET and on GaAs heterobipolar transistors (HBT) was developed for mono...
The technology towards a stable 0.5 #mu#m GaAs-MESFET process has been developed and applied to diff...
Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuit...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
In this paper a possible implementation of digital circuits in a MMIC SAGFET/SAGHEMT technology is d...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is ne...
This study is embedded in the research program 'III-V-Electronics, Integrated Circuits for Highest S...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...