Metallorganische Molekularstrahlepitaxie (MOMBE) von GaAs/AlGaAs Abschlussbericht

While MOMBE has proven to have excellent epitaxical quality for phosphorous-containing material systems, the aluminium-containing semiconductor systems are still dominated by solid source MBE. This study shall find out the applicability of MOMBE for GaAs/AlGaAs in order to prove the advantages of this technology (selective growth, high p-type doping, convenient handling, low defect density, etc.). GaAs layers were grown in excellent quality. Beside n-and p-type doping the possibility of delta-doping and selective growth were demonstrated. Studies regarding AlGaAs were focused on new concepts for precursors. Using APAH, high quality AlGaAs films with background doping above p = 10"1"7cm"-"3 were deposited, whereas AlGaAs layers grown from Alan reveal lower background carrier concentrations. The quality of GaAs/AlGaAs heterostructures was investigated by means of QW structures. A sufficient improvement of the interface sharpness could be achieved as compared to literature values. This study reveals possible applications for MOMBE grown GaAs/AlGaAs device structures such as highly carbon doped HBT's and high-current density HEMT's. (orig.)SIGLEAvailable from TIB Hannover: D.Dt.F.QN1(16,13) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman