Add to ORKGThe following topics were dealt with: the materials system SiC, passivated SiC surfaces, passivation by epitaxial oxide monolayers, (1x1) structures, reconstruction on SiC(0001), LEED analysis, Auger electron spectroscopy and scanning tunneling microscopy of SiC interfaces and surfaces (WL)SIGLEAvailable from TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) a...
The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED)...
In the framework of this thesis the electronic structure of the 3C-SiC(001)-(2 x 1), 3C-SiC(001)-c(4...
Growth of SiC wafer material, of heterostructures with alternating SiC crystal modications (polytype...
The atomic structure of reconstruction phases on silicon rich hexagonal SiC surfaces was investigate...
The basal surfaces of hexagonal SiC exhibit a large variety of surface reconstructions that develop...
This study describes morphology and structure of SiC thin films which are grown up by sublimation ep...
Nous étudions les surfaces du b-SiC(001) propres, couvertes d argent, hydrogénées et oxydées par mic...
The following topics were covered: interface states, MOS condensator, admittance spectroscopy of int...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
We have systematically studied reconstructions of the 6H SiC(0001) and (000-1) surface under both Si...
The electronic and structural properties of SiC surfaces have been subject to a number of studies in...
Structural and morphological investigations of the initial stages in solid source molecular beam epi...
The atomic step-terrace structure on hexagonal silicon carbide (0 0 0 1) surface is significant in t...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) a...
The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED)...
In the framework of this thesis the electronic structure of the 3C-SiC(001)-(2 x 1), 3C-SiC(001)-c(4...
Growth of SiC wafer material, of heterostructures with alternating SiC crystal modications (polytype...
The atomic structure of reconstruction phases on silicon rich hexagonal SiC surfaces was investigate...
The basal surfaces of hexagonal SiC exhibit a large variety of surface reconstructions that develop...
This study describes morphology and structure of SiC thin films which are grown up by sublimation ep...
Nous étudions les surfaces du b-SiC(001) propres, couvertes d argent, hydrogénées et oxydées par mic...
The following topics were covered: interface states, MOS condensator, admittance spectroscopy of int...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
We have systematically studied reconstructions of the 6H SiC(0001) and (000-1) surface under both Si...
The electronic and structural properties of SiC surfaces have been subject to a number of studies in...
Structural and morphological investigations of the initial stages in solid source molecular beam epi...
The atomic step-terrace structure on hexagonal silicon carbide (0 0 0 1) surface is significant in t...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) a...
The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED)...
In the framework of this thesis the electronic structure of the 3C-SiC(001)-(2 x 1), 3C-SiC(001)-c(4...