Add to ORKGThe following topics were covered: interface states, MOS condensator, admittance spectroscopy of interfaces, wide-band gap semiconductor SiC, SiC MOS structures, DLTS, SiC/SiO_2 interface states. (WL)SIGLEAvailable from TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman
The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC me...
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. O...
International audienceIn the context of the MobiSiC project (Mobility engineering for SiC devices) w...
The ability to thermally grow SiO2 on silicon carbide (SiC) has made Metal Oxide Semiconductor (MOS)...
The following topics were dealt with: the materials system SiC, passivated SiC surfaces, passivation...
This thesis focuses on basic MOS research on SiC and the design of high voltage MOS devices on SiC w...
The following topics were dealt with: wide band gap semiconductors, semiconductor doping, ion implan...
The purpose of this work is to study the chemical and structural variations across the MEO SiO 2/4H-...
Detailed knowledge of the electronic structure is prerequisite for the design of electronic devices....
“The history of solid-state physics in general and of semiconductors in particular, is not so much ...
cited By 1International audienceThe breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobi...
SIGLECNRS T 57186 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale str...
The need for an alternative to the prevailing Si based semiconductor devices is ever present, since ...
We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using...
The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC me...
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. O...
International audienceIn the context of the MobiSiC project (Mobility engineering for SiC devices) w...
The ability to thermally grow SiO2 on silicon carbide (SiC) has made Metal Oxide Semiconductor (MOS)...
The following topics were dealt with: the materials system SiC, passivated SiC surfaces, passivation...
This thesis focuses on basic MOS research on SiC and the design of high voltage MOS devices on SiC w...
The following topics were dealt with: wide band gap semiconductors, semiconductor doping, ion implan...
The purpose of this work is to study the chemical and structural variations across the MEO SiO 2/4H-...
Detailed knowledge of the electronic structure is prerequisite for the design of electronic devices....
“The history of solid-state physics in general and of semiconductors in particular, is not so much ...
cited By 1International audienceThe breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobi...
SIGLECNRS T 57186 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale str...
The need for an alternative to the prevailing Si based semiconductor devices is ever present, since ...
We obtained the energy distribution of the interface states at the SiO2/4H-SiC(0001) interface using...
The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC me...
SiC has immense potential as the semiconductor for future metal–oxide–semiconductor (MOS) devices. O...
International audienceIn the context of the MobiSiC project (Mobility engineering for SiC devices) w...