Neue Duennschichtverfahren durch 'Molecular Engineering' metallorganischer Verbindungen. Teilprojekt: Untersuchung der Plasmaparameter Abschlussbericht

Organometallic compounds are used as precursors in MOPECV processes to deposit various layer materials. In this project the plasma parameters for the deposition of metals (Al, Cu), nitrides (TiN, BN) and amorphous boron-carbon-nitrogen layers (BCN:H) by considering the molecular structure of the precursor were investigated. The deposition of pure Al and Cu layers is only feasible without plasma enhancement due to the activation of the carbon containing ligands. It was shown that a direct Al-C bond in the precursor molecule leads to a preferred codeposition of carbon. A plasma activated nucleation step substancially lowers the nucleation barrier and can therefore be used as pretreatment to deposit Al or Cu with a low surface roughness by conventional MOCVD. The deposition of cubic boron nitride using N-trimethylborazine (TMB) requires a high ion density and ion energy. Thus, an ECR (Electron Cyclotron Resonance) plasma feeded with an argon/nitrogen mixture and an appropriate substrate bias was used. The high density of argon ions leads to the formation of highly crosslinked BCN:H network employing TMB. A micro hardness of about 30 GPa could be achieved. For the first time pure TiN layers could be deposited at temperatures as low as 100 C by employing tetrakis(dimethylamido)titanium (TDMAT). TDMAT was introduced into the downstream region of a nitrogen or ammonia ECR plasma. Experiments with labeled nitrogen showed clearly that the nitrogen in TiN is originated from the plasma activated nitrogen and not from the precursor molecule. (orig.)SIGLEAvailable from TIB Hannover: F95B1220+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman