As part of the main point of support 'alternative precursors for the vapour phase epitaxy' we have investigated the usability of the metalorganic (MO) precursors tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs) for the MOVPE process. The present standard precursors PH_3 and AsH_3 are highly toxic, thermally stable and have a high vapour pressure. In contrast, the metalorganics are liquids with low vapour pressures and in addition they are less toxic and less stable. So the use of these precursors can strongly reduce the risk potential of the MOVPE process. Beside, the consumption of TBP, TBAs can be reduced considerably, compared to that of the standard hydrides, due to the more effective decomposition during the growth process. ...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
Ist eine Energiequelle gleich einer anderen? Um die Eigenschaften eines Materials gezielt zu ändern,...
The influence of precursor structure and reactivity on properties of compound semiconductors grown b...
The main task of this project has been the test of novel As- and P-precursors with lower toxicity an...
Novel group V precursors are to be chosen for MOMBE growth and tested in optoelectronic device struc...
The activities were performed in close cooperation with partners from the universities of Leipzig (0...
Within this research project, we have investigated 3 novel organic phosphorus compounds as potential...
Synthetic and purification technologies were found for dimethylaluminium hydride and dimethylgallium...
Studies of the reaction or decomposition products of precursors for metal organic vapour phase epita...
In this short paper an outline of the properties of an ideal precursor for MOCVD is given. Two syste...
Journal ArticleThe most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine ...
Accident prevention of metalorganic precursors (MOP) becomes of increasing importance as larger volu...
The objective of the project was to make contributions and stimulations to new CVD procedures for th...
The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in parti...
Recent advances in the growth of III-V and II-VI semiconductor materials by MOVPE have been greatly ...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
Ist eine Energiequelle gleich einer anderen? Um die Eigenschaften eines Materials gezielt zu ändern,...
The influence of precursor structure and reactivity on properties of compound semiconductors grown b...
The main task of this project has been the test of novel As- and P-precursors with lower toxicity an...
Novel group V precursors are to be chosen for MOMBE growth and tested in optoelectronic device struc...
The activities were performed in close cooperation with partners from the universities of Leipzig (0...
Within this research project, we have investigated 3 novel organic phosphorus compounds as potential...
Synthetic and purification technologies were found for dimethylaluminium hydride and dimethylgallium...
Studies of the reaction or decomposition products of precursors for metal organic vapour phase epita...
In this short paper an outline of the properties of an ideal precursor for MOCVD is given. Two syste...
Journal ArticleThe most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine ...
Accident prevention of metalorganic precursors (MOP) becomes of increasing importance as larger volu...
The objective of the project was to make contributions and stimulations to new CVD procedures for th...
The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in parti...
Recent advances in the growth of III-V and II-VI semiconductor materials by MOVPE have been greatly ...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
Ist eine Energiequelle gleich einer anderen? Um die Eigenschaften eines Materials gezielt zu ändern,...
The influence of precursor structure and reactivity on properties of compound semiconductors grown b...