The fabrication process of a light emitting diode (LED)-array with porous silicon (PS) was investigated. The fundamental idea was to control the electroluminescence (EL) of a continuous PS-layer locally by an array of vertical metal-semiconductor-feld-effect-transis tors (MESFETs) based on single crystalline Si/CoSi_2/Si(100)-heterostructures. The LED-array consists of two crossed stripe-gratings buried in a silicon substrate with a continuous PS-layer on top. One grating acts as source-, the other one as gate- and the PS-layer as drain-electrode of the transistor. Secondary ion mass spectroscopy and channeling measurements have shown that highly conducting source-gratings in intrinsic silicon substrate can be fabricated by implantation of ...
[[abstract]]Lateral injection porous silicon (PS) diodes and metal-PS-metal (MPM) structures incorpo...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Silicides are the materials of choice for contacts and short interconnects in microelectronic device...
The fabrication process of a light emitting diode (LED)-array with porous silicon (PS) was investiga...
The demonstration of efficient and reliable light emitting diodes (LED) in a silicon based system wi...
A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor...
The objective of this project was to create an optimized, repeatable process for integrated PSI (Por...
An improved test device, based on the light emitting device (LED) presented in the following article...
A test device to implement room temperature visible light emitting diodes (LED) based on porous sili...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
The primary focus of this project was to continue process development of integrated PSibased (porous...
Although silicon is the dominant semiconductor today, lightemitting devices are currently based on c...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
[[abstract]]Lateral injection porous silicon (PS) diodes and metal-PS-metal (MPM) structures incorpo...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Silicides are the materials of choice for contacts and short interconnects in microelectronic device...
The fabrication process of a light emitting diode (LED)-array with porous silicon (PS) was investiga...
The demonstration of efficient and reliable light emitting diodes (LED) in a silicon based system wi...
A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor...
The objective of this project was to create an optimized, repeatable process for integrated PSI (Por...
An improved test device, based on the light emitting device (LED) presented in the following article...
A test device to implement room temperature visible light emitting diodes (LED) based on porous sili...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
The primary focus of this project was to continue process development of integrated PSibased (porous...
Although silicon is the dominant semiconductor today, lightemitting devices are currently based on c...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light ...
Electroluminescent devices in porous silicon technology are presented. The fabrication and the chara...
[[abstract]]Lateral injection porous silicon (PS) diodes and metal-PS-metal (MPM) structures incorpo...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Silicides are the materials of choice for contacts and short interconnects in microelectronic device...