Skalierfaehige Si/SiGe-HBT-Niedertemperaturtechnologie (LOTUS) Abschlussbericht

Modern information systems for frequencies above 1 GHz and convinient data rates are based on mixed chipsets, consisting of DMOS and III-V compound devices. A combination of CMOS and SiGe devices, especially on a single chip, should be an equal performance but lower cost solution. Loading semiconductor manufacturers work on these field and prepare first demonstration ICs (IBM, SGS Thomson, Philips, NEC, SIEMENS). The aim of the LOTUS project was to find attractive, competitive solutions for German semiconductor manufacturers. At the IHP a low-cost SiGe HBT technology modul was developed, which can be integrated on the top of any CMOS base process, in unity of material research, process step development (main point: SiGe epitaxy), process integration technology and performance verification by means of basic demonstrator ICs. This goal was reached and experimentally demonstrated on a sufficient number of 100 mm wafer lots preparations, including CMOS integration on an industrial 0.8 #mu#m platform (company: AMS). International best dynamical performance parameters for CMOS integrated SiGe HBTs of f_T and f_m_a_x equal to 50 GHz and 50 GHz respectively are reached. This SiGe HBT technology should be well suitable for the integration of #>=#10"4 SiGe transistors/chip and working frequencies of more or equal to 2 GHz and convinient data rates respectively above the limits, which can be reached by 'pure' CMOS technologies, including the noise figures, especially for new system and IC solutions of the information technology including satellite and glasfiber networks, for traffic systems and others. A further work on the integration of HBTs onto a more scaled CMOS technology (<0.4 #mu#m design rules) and on a broader IC application, together with interested industrial semiconductor manufacturers should be done. (orig.)SIGLEAvailable from TIB Hannover: F98B1058+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman