Herstellung homogener duenner Hoch-T_c-Supraleiter-Schichten durch H.F. Ionenstrahlbeschichtung Schlussbericht

A direct ion beam deposition system based on radio frequency generation of gas plasma, used to produce a 12 cm diameter ion beam from electrically conducting as well as non-conducting targets, is described. The ions are accelerated to various energies, focussed, and can be deposited on electrically conducting and non-conducting substrates at different temperatures. This deposition system is used to deposit large surface area copper films (up to 10 cm x 17 cm) on glass, Al_2O_3, and ZrO_2 substrates. Film parameters are studied. X-ray structure, microstructure, and temperature dependence of the electrical resistivity of the copper films is measured. (orig.)SIGLEAvailable from TIB Hannover: F93B126 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman