MOVPE mit neuartigen Quellen zur Darstellung von Halbleiterlasern. Teilbereich: Schichtstrukturen fuer Emitter Schlussbericht

The main task of this project has been the test of novel As- and P-precursors with lower toxicity and reduced hazardous potential for the MOVPE (metal-organic vapour phase epitaxy) of (GaIn)(PAs) and (AlGaIn)P. The investigation has been concentrated on the systematic replacement of AsH_3 and PH_3 by the compounds with lower number of As-H- and/or P-H-bonds, as tertiarybutylarsane (TBAs), ditertiarybutylarsame (DitBAs), diethyltertiarybutylarsane (DEtBAs), tertiarybutylphosphane (TBP), and ditertiarybutylphosphane (DitBuPH). (GaIn)/(PAs)/InP: The electrical and optical properties of the expitaxial (GaIn)(PAs) material have proved that the novel sources are effective and equivalent substitutes for the highly toxic AsH_3 and PH_3. Only the growth parameter window is constricted to a certain but acceptable extent. The P- and As-incorporation behaviour is improved. Especially the P incorporation is more efficient. The quaternary material can be grown with better homogeneity and reproducability over the entire composition range. MCRW laser structures designed for 1.55 #mu#m emission wavelength have been processed and characterized in cooperation with one of the project partners (Siemens AG, Munich). Threshold current densities between 1.7 and 2.0 kA cm"-"2 and T_0 values from 50 to 60 K are comparable with the data of structures grown in the standard system. MCRW laser diodes (350 x 2 #mu#m"2) with I_t_h=33 to 38 mA, #eta#=0.11 to 0.14 W/A, and T_0 between 58 and 71 K (at 60 C) don't show any changes in the short time degradation behaviour under cw operation. (AlGaIn)/P/GaAs: Using different P-precursors, the growth parameters and the properties of the epitaxial material have been verified for (GaIn)P, (AlIn)P, and (AlGaIn)P grown on (001) GaAs substrates with different misorientations. In the case of P as the only group-V lattice constituent, the growth parameter window becomes very narrow, if substituted phosphanes are used. Nevertheless, using TBP epitaxial (GaIn)P layers with optical properties comparable to the standard system can be grown. (orig.)SIGLEAvailable from TIB Hannover: F98B1479+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman