The Josephson junction is the most important basic device in active superconductor electronics. Ramp-type junctions are used in high-temperature-superconductor (HTS) devices because the fabrication process of these junctions is compatible with a complex multilayer technology and provides a high design flexibility. Most HTS-applications require a high normal resistance of the junctions. Therefore PrBa_2Cu_3O_7_-_#delta# (PBCO) can be used as the barrier material with a high resistivity. In this work, the charge transport at the interfaces of the barrier to the superconducting electrodes was investigated. To compare the influence of the degradation during the ion-beam milling process of the ramp, a second fabrication process was used for an i...
We have investigated both experimentally and theoretically the normal state resistance and Josephson...
Improved high frequency coupling to Josephson tunneling junctions must involve impedance transformat...
The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0...
The Josephson junction is the most important basic device in active superconductor electronics. Ramp...
Josephson junctions are the most important active elements in high-temperature-superconductor (HTS) ...
The Josephson junction is the key active device in the superconductor electronics. Junctions in the ...
Josephson junctions are the most important active elements in high-temperaturesuperconductor (FITS) ...
Ramp type Josephson junctions have been fabricated using DyBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// as...
A study of the YBCO/PBCO/YBCO ramp junctions with and without PBCO barrier shows that the Josephson ...
The mechanisms of current passage and the causes of IcRn (critical-current normal-resistance) produc...
In this contribution we will discuss the charge transport of ramp-type HTS Josephson junctions with ...
The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are inves...
In this contribution we will discuss the requirements to be imposed on the barriers of HTS Josephson...
A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparen...
We report preparation of a novel barrier structure for high Tc superconducting multilayer Josephson ...
We have investigated both experimentally and theoretically the normal state resistance and Josephson...
Improved high frequency coupling to Josephson tunneling junctions must involve impedance transformat...
The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0...
The Josephson junction is the most important basic device in active superconductor electronics. Ramp...
Josephson junctions are the most important active elements in high-temperature-superconductor (HTS) ...
The Josephson junction is the key active device in the superconductor electronics. Junctions in the ...
Josephson junctions are the most important active elements in high-temperaturesuperconductor (FITS) ...
Ramp type Josephson junctions have been fabricated using DyBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// as...
A study of the YBCO/PBCO/YBCO ramp junctions with and without PBCO barrier shows that the Josephson ...
The mechanisms of current passage and the causes of IcRn (critical-current normal-resistance) produc...
In this contribution we will discuss the charge transport of ramp-type HTS Josephson junctions with ...
The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are inves...
In this contribution we will discuss the requirements to be imposed on the barriers of HTS Josephson...
A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparen...
We report preparation of a novel barrier structure for high Tc superconducting multilayer Josephson ...
We have investigated both experimentally and theoretically the normal state resistance and Josephson...
Improved high frequency coupling to Josephson tunneling junctions must involve impedance transformat...
The use of PrBa2Cu3−xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0...