Grundlagen fuer diodengepumpte Nd-dotierte Festkoerperlaser hoher Leistung. Teilvorhaben: Grundlagen fuer die Realisierung von Hochleistungslaserdioden im W- und Kilowattbereich als Lichtquelle fuer das Pumpen von Festkoerperlasern und die Materialbearbeitung Abschlussbericht

The temperature behaviour of semiconductor lasers has a distinct influence on their application to pumping solid state lasers and material processing. The goal was to carry out experimental and theoretical investigations with particular attention to the temperature dependence of the emission properties, in order to increase output power, efficiency, and lifetime of such devices. Potential use in vacuum deposited Pb-Sn solders have been tested for mounting high-power laser diodes and arrays. For the chip mounting, a special apparatus device has been developed. By means of the Finite-Element Method, numerical simulations of the temperature behaviour of GaAlAs/GaAs high-power laser diodes have been performed. From calculated two- and three-dimensional temperature distributions, design rules for the construction of high-power laser diodes could be derived. A model has been developed, which allows a unified description of output power and efficiency as functions of the internal loss processes. Using this model, quantum well laser structures have been examined with respect to their optimization. The facet temperature was measured by means of photoluminescence and micro-Raman spectroscopy. Under operating conditions, facet temperatures as high as 100 C have been measured for GaAlAs/GaAs lasers. The error was about #+-#4K. For one special structure, it was possible to measure the temperature distribution along the resonator by means of electroluminescence. (orig.)SIGLEAvailable from TIB Hannover: F95B2059+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman