Oberflaechenemittierende Laserdioden mit vertikalem Resonator. Teilvorhaben: Entwicklung von aktiven optoelektronischen Komponenten Abschlussbericht

InGaAs/AlGaAs-vertical cavity surface emitting lasers with lateral current injection and emission wavelength of 980 nm have been fabricated. Small series resistances of 25 #OMEGA# and threshold voltages of 1.7 V were obtained. Lasers of dimensions 4 x 4 #mu#m"2 to 8 x 8 #mu#m"2 showed typical threshold currents below 5 mA (optimum value: 3.2 mA) with external quantum efficiencies exceeding 5%. Maximum output powers of 0.5 mW in cw and 1.4 mW in pulsed operation were obtained. Linearly polarized monomode emission was observed. Far field patterns showed Gaussian profiles with divergence angles of 9"0. Blocking layers have been incorporated into the laser structure to confine the current inside the resonator. These lasers, with top Bragg mirrors regrown in a second epitaxial step, again showed small series resistances and low threshold voltages, but exhibited increased threshold currents and quantum efficiencies. Epitaxial regrowth by molecular beam epitaxy has been shown to be viable for the fabrication of optoelectronic devices, thus providing flexibility in device fabrication. A 2D-simulator has been developed based on a drift-diffusion model and rate equations. Experimental device results can be adequately simulated. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(22,15) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman