Neue Quellen fuer die Gasphasenepitaxie. Teilvorhaben: Untersuchungen mit MBMS zum Einsatz neuartiger Gruppe-III und Gruppe-V-Chemikalien in der MOMBE Abschlussbericht

Novel group V precursors are to be chosen for MOMBE growth and tested in optoelectronic device structures in order to replace the highly toxic hydrides arsine and phosphine. Before start of this project some first promising data were available in the literature, but detailed investigations were still missing. An analysis of vapor pressure, purity and cracking behavior had to be performed to obtain information on the suitability of the alternative precursors for MOMBE growth. Furthermore growth mechanisms had to be studied in-situ by modulated beam mass spectroscopy. Single layers and laser structures had to be characterized and compared to data from the conventional hydride precursors. The alternative precursors TBP, TBAs, DTBP and BTBAs are suitable for MOMBE growth. Especially with TBP and TBAs high purity epitaxial layers and laser structures yielding low threshold currents have been achieved. The results are comparable to data obtained with hydride precursors. Furthermore surface selective growth of laser structures has successfully been demonstrated. It can be concluded that the novel group V precursors are an interesting alternative for the standard toxic hydrides concerning technical, economical and ecological aspects. (orig.)SIGLEAvailable from TIB Hannover: DtF QN1(66,5) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman