Multiprozessmodule auf der Basis moderner Plasmaquellen nach dem Elektron-Zyklotron-Prinzip (ECR) Schlussbericht

The report describes the following developments: (i) a MESC compatible dry etching modul for polysilicon gate structuring at a storage density of #>=# 64 MB, (ii) an electron cyclotron principle-based plasma source for advanced low pressure plasma generation at high plasma density for semiconductor plasma processes (plasma density: 1E11 - 1E12 particles/cm"3 at < 5 mbar), (iii) a source design with permanent magnets, and (iv) a modul for controllable low-energy ions with separated plasma generation and ion extraction. By these developments were achieved: excellent etching structures with 0.35 and 0.25 #mu#m line width, highly anisotropic etching profiles, reduced microloading effects and etching rate homogeneities of 4% on patterned 200 mm wafers. (WEN)Available from TIB Hannover: F96B565+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman