Mass and optical spectroscopy of CF_4 + O_2 plasmas and their application to the etching of Si, Ge and SiGe alloys

Studies of the reactive ion etching of silicon-germanium alloys

Oehrlein, GS Gottlieb
Kroesen, GMW Gerrit
Frésart, E Edouard de
Zhang, Y
Bestwick, TD

January 1991

Reactive-ion etching (RIE) of epitaxial, strained Si1-xGex alloys, x=0.20, in fluorine-chlorine-, an...

Quantitative spectroscopy for fusion plasmas

Hellermann, M. von
Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

January 1994

SIGLEAvailable from British Library Document Supply Centre- DSC:4672.262(JET-P--94/08) / BLDSC - Bri...

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding, Ji
Hershkowitz, Noah

January 1996

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright...

Spectroscopic studies of the etching of Si and Al in Cl2 and CCl4 plasmas

Clarke, P.E

January 1988

SIGLEAvailable from British Library Document Supply Centre- DSC:DX87784 / BLDSC - British Library Do...

Absolute densities of reaction products from plasma etching of quartz

van Veldhuizen, E.M.
Bisschops, Th.
van Vliembergen, E.J.W.
van Wolput, J.H.M.C.

January 1985

The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2,...

Studies of plasmas used for semiconductor etching

Sucksmith, J.P

January 1993

SIGLEAvailable from British Library Document Supply Centre- DSC:D177838 / BLDSC - British Library Do...

Optical and mass spectroscopic analysis of SF6 RIE plasmas for modelling of poly-silicon etching

Hoffmann, P.
Heinrich, F.

January 1989

SF sub 6 RIE plasmas during poly-silicon etching are investigated by optical emission spectroscopy (...

A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and Si

G. Turban
B. Grolleau
P. Launay
P. Briaud

January 1985

A mass spectrometric analysis of the neutral products and the positive ions extracted from discharge...

Nanostructure etching with plasmas

Zachariasse, J.M.F.

January 1995

SIGLEAvailable from British Library Document Supply Centre-DSC:D197896 / BLDSC - British Library Doc...

Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Gaboriau, F.
Cartry, G.
Peignon, Mc
Cardinaud, Christophe

January 2006

International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...

Plasma Etching with Tetrafluoromethane and Nitrous Oxide: The Role of Oxygen in the Etching of Silicon Materials

Yonhua Tzeng
Tsan H. Lin

October 2016

The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

Bisschops, T.H.J.
Hoog, de, F.J.
Schram, D.C.

January 1986

A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...

Characterization of dry etching processes of III-V semiconductors in silicon tetrachloride plasmas

Murad, S.K

January 1994

SIGLEAvailable from British Library Document Supply Centre-DSC:DXN004908 / BLDSC - British Library D...

Database Development of SiO<sub>2</sub> Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Youngseok Lee
Heejung Yeom
Daehan Choi
Sijun Kim
Jangjae Lee
Junghyung Kim
Hyochang Lee
ShinJae You

October 2022

In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...

End Point Determination of Aluminum CCI, Plasma Etching by Optical Emission Spectroscopy

B. J. Curtis
H. J. Brunner

January 1978

The use of optical emission spectra for end point detection has been reported for the CF 4 plasma et...

Studies of the reactive ion etching of silicon-germanium alloys

Oehrlein, GS Gottlieb
Kroesen, GMW Gerrit
Frésart, E Edouard de
Zhang, Y
Bestwick, TD

January 1991

Reactive-ion etching (RIE) of epitaxial, strained Si1-xGex alloys, x=0.20, in fluorine-chlorine-, an...

Quantitative spectroscopy for fusion plasmas

Hellermann, M. von
Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

January 1994

SIGLEAvailable from British Library Document Supply Centre- DSC:4672.262(JET-P--94/08) / BLDSC - Bri...

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding, Ji
Hershkowitz, Noah

January 1996

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright...

Spectroscopic studies of the etching of Si and Al in Cl2 and CCl4 plasmas

Clarke, P.E

January 1988

SIGLEAvailable from British Library Document Supply Centre- DSC:DX87784 / BLDSC - British Library Do...

Absolute densities of reaction products from plasma etching of quartz

van Veldhuizen, E.M.
Bisschops, Th.
van Vliembergen, E.J.W.
van Wolput, J.H.M.C.

January 1985

The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2,...

Studies of plasmas used for semiconductor etching

Sucksmith, J.P

January 1993

SIGLEAvailable from British Library Document Supply Centre- DSC:D177838 / BLDSC - British Library Do...

Optical and mass spectroscopic analysis of SF6 RIE plasmas for modelling of poly-silicon etching

Hoffmann, P.
Heinrich, F.

January 1989

SF sub 6 RIE plasmas during poly-silicon etching are investigated by optical emission spectroscopy (...

A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and Si

G. Turban
B. Grolleau
P. Launay
P. Briaud

January 1985

A mass spectrometric analysis of the neutral products and the positive ions extracted from discharge...

Nanostructure etching with plasmas

Zachariasse, J.M.F.

January 1995

SIGLEAvailable from British Library Document Supply Centre-DSC:D197896 / BLDSC - British Library Doc...

Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Gaboriau, F.
Cartry, G.
Peignon, Mc
Cardinaud, Christophe

January 2006

International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...

Plasma Etching with Tetrafluoromethane and Nitrous Oxide: The Role of Oxygen in the Etching of Silicon Materials

Yonhua Tzeng
Tsan H. Lin

October 2016

The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...

Plasma parameters and silicon dioxide etch rates in a carbon tetrafluoride plasma

Bisschops, T.H.J.
Hoog, de, F.J.
Schram, D.C.

January 1986

A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and inpu...

Characterization of dry etching processes of III-V semiconductors in silicon tetrachloride plasmas

Murad, S.K

January 1994

SIGLEAvailable from British Library Document Supply Centre-DSC:DXN004908 / BLDSC - British Library D...

Database Development of SiO<sub>2</sub> Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Youngseok Lee
Heejung Yeom
Daehan Choi
Sijun Kim
Jangjae Lee
Junghyung Kim
Hyochang Lee
ShinJae You

October 2022

In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...

End Point Determination of Aluminum CCI, Plasma Etching by Optical Emission Spectroscopy

B. J. Curtis
H. J. Brunner

January 1978

The use of optical emission spectra for end point detection has been reported for the CF 4 plasma et...

Studies of the reactive ion etching of silicon-germanium alloys

Oehrlein, GS Gottlieb
Kroesen, GMW Gerrit
Frésart, E Edouard de
Zhang, Y
Bestwick, TD

January 1991

Reactive-ion etching (RIE) of epitaxial, strained Si1-xGex alloys, x=0.20, in fluorine-chlorine-, an...

Quantitative spectroscopy for fusion plasmas

Hellermann, M. von
Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

January 1994

SIGLEAvailable from British Library Document Supply Centre- DSC:4672.262(JET-P--94/08) / BLDSC - Bri...

Symmetric rate model for fluorocarbon plasma etching of SiO2

Ding, Ji
Hershkowitz, Noah

January 1996

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright...

Mass and optical spectroscopy of CF_4 + O_2 plasmas and their application to the etching of Si, Ge and SiGe alloys

Abstract

Extracted data

Mass and optical spectroscopy of CF_4 + O_2 plasmas and their application to the etching of Si, Ge and SiGe alloys

Abstract

Extracted data

Related items

Related items