Oxygen-related point defects in silicon and germanium

A modelling study of several oxygen related defects in silicon and germanium crystals is reported. These include radiation and thermally activated defects. The problem of thermal donor formation is revised in detail. Here we report the properties of the simple interstitial oxygen complexes, their diffusivity and clustering properties, culminating with a novel model for the thermal double donor defects (TDD). The model is also extended to the hydrogen-related shallow thermal donor family, STD(H). According to the model, electrons from over-coordinated oxygen atoms with a donor level lying above that of a stress-induced state, are transfered to the later. This picture is analogous to that of an externally doped quantum-dot. (author)Available from British Library Document Supply Centre-DSC:DXN046333 / BLDSC - British Library Document Supply CentreSIGLEGBUnited Kingdo