Add to ORKGSIGLEAvailable from British Library Document Supply Centre- DSC:D32056/80 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
SIGLEAvailable from British Library Document Supply Centre- DSC:D59190 / BLDSC - British Library Doc...
In this study Rutherford backscattering has been used to determine the tantalum ion transport number...
[[abstract]]Tantalum nitride has been found to be a promising material for many applications such as...
Evaporated gold and tantalum films have been bombarded with argon ions. In the case of gold films th...
Tantalum thin films have been implanted with argon, nitrogen or oxygen to change their physical, che...
Please read abstract in the article.http://www.worldscientific.com/worldscinet/mplb2021-03-09hj2020M...
The dielectric polarization processes, conduction mechanisms and space charge effects occurring in t...
In the present study, the microstructural and statistical properties of unimplanted in comparison to...
Properties of materials in nano-scale are very different from those in bulk form. The electrical res...
Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films i...
The work has been directed towards the investigation of the ion implantation doping effects in thin ...
AgBr thin films contain many dislocations and these are the source of silver interstitials, The sub-...
Voltage controlled negative differential resistance (NDR), electron emission (EE) and electrolumines...
WOS: 000081585900010Cr metal ions with doses of 1 x 10(14)-1 x 10(15) ions/cm(2) have been implanted...
Includes bibliographical references (pages [57]-58)In this study, Au, Ag, and A1 films were subjecte...
SIGLEAvailable from British Library Document Supply Centre- DSC:D59190 / BLDSC - British Library Doc...
In this study Rutherford backscattering has been used to determine the tantalum ion transport number...
[[abstract]]Tantalum nitride has been found to be a promising material for many applications such as...
Evaporated gold and tantalum films have been bombarded with argon ions. In the case of gold films th...
Tantalum thin films have been implanted with argon, nitrogen or oxygen to change their physical, che...
Please read abstract in the article.http://www.worldscientific.com/worldscinet/mplb2021-03-09hj2020M...
The dielectric polarization processes, conduction mechanisms and space charge effects occurring in t...
In the present study, the microstructural and statistical properties of unimplanted in comparison to...
Properties of materials in nano-scale are very different from those in bulk form. The electrical res...
Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films i...
The work has been directed towards the investigation of the ion implantation doping effects in thin ...
AgBr thin films contain many dislocations and these are the source of silver interstitials, The sub-...
Voltage controlled negative differential resistance (NDR), electron emission (EE) and electrolumines...
WOS: 000081585900010Cr metal ions with doses of 1 x 10(14)-1 x 10(15) ions/cm(2) have been implanted...
Includes bibliographical references (pages [57]-58)In this study, Au, Ag, and A1 films were subjecte...
SIGLEAvailable from British Library Document Supply Centre- DSC:D59190 / BLDSC - British Library Doc...
In this study Rutherford backscattering has been used to determine the tantalum ion transport number...
[[abstract]]Tantalum nitride has been found to be a promising material for many applications such as...