Hot electron light emitting and lasing in semiconductor heterostructures (HELLISH) is a longitudinal transport structure comprising of a GaAs Quantum Well within an Al_xGa_1_-_xAs pn junction. The light emission from the HELLISH device was previously believed to be merely due to hot electron effects. In the current work, we showed, however, that the device can be operated even at low applied electric fields where the hot electron effects are essentially negligible. Thus, a novel model for operation with the new concept of 'quasi-flatband condition' is introduced. In order to investigate new functionalities of the HELLISH devices, a new structure with longer p-channel, nicknamed Top Hat HELLISH (THH), is also fabricated and demonstrated. In ...
Further investigations on a hot electron barrier light emitter (HEBLE), which has a potential for us...
A device based on a PIN heterostructure with a quantum well in the intrinsic region is described. Th...
A novel hot electron light emitter which has the potential to be used in the area of wavelength doma...
The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a ...
We demonstrate the operation of a novel tunable wavelength surface emitting device. The device is ba...
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertic...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructure devices (HELLISH-1)is no...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is ...
A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on t...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasin...
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity surface emi...
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertic...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semicond...
Further investigations on a hot electron barrier light emitter (HEBLE), which has a potential for us...
A device based on a PIN heterostructure with a quantum well in the intrinsic region is described. Th...
A novel hot electron light emitter which has the potential to be used in the area of wavelength doma...
The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a ...
We demonstrate the operation of a novel tunable wavelength surface emitting device. The device is ba...
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertic...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructure devices (HELLISH-1)is no...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is ...
A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on t...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasin...
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity surface emi...
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertic...
Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surfac...
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semicond...
Further investigations on a hot electron barrier light emitter (HEBLE), which has a potential for us...
A device based on a PIN heterostructure with a quantum well in the intrinsic region is described. Th...
A novel hot electron light emitter which has the potential to be used in the area of wavelength doma...