Add to ORKGSIGLEAvailable from British Library Document Supply Centre- DSC:DX177890 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
<正> A computer program MACA was developed for simulating high-dose ion implantation into amorp...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX83397 / BLDSC - British Library Do...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Commencing with the LSS integro-differential equation, an approximate transport equation is derived ...
The amorphization of silicon due to atomic displacement during ion implantation has been simulated. ...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon...
In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, we...
Atomistic modeling has been applied in studying and simulating the advanced junction technologies. W...
SIGLEAvailable from British Library Document Supply Centre- DSC:D66918/86 / BLDSC - British Library ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
<正> A computer program MACA was developed for simulating high-dose ion implantation into amorp...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX83397 / BLDSC - British Library Do...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Commencing with the LSS integro-differential equation, an approximate transport equation is derived ...
The amorphization of silicon due to atomic displacement during ion implantation has been simulated. ...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon...
In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, we...
Atomistic modeling has been applied in studying and simulating the advanced junction technologies. W...
SIGLEAvailable from British Library Document Supply Centre- DSC:D66918/86 / BLDSC - British Library ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
<正> A computer program MACA was developed for simulating high-dose ion implantation into amorp...
In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular...