The statistics of the dielectric breakdown of thin films

The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide have been studied. The self healing technique which allows numerous breakdowns to be observed on one sample was employed. Ramp and steady state voltage experiments are reported and the limitations of these techniques are discussed. It is shown that the experimental data on breakdown can be fitted to two-parameter Weibull distributions using mixed distribution models. Methods have been developed to facilitate the evaluation of the associated parameters from results taken over limited time periods by graphical means. The significance of these parameters and the relationship between ramp and steady state testing techniques are discussed. (author)SIGLEAvailable from British Library Document Supply Centre-DSC:DX215243 / BLDSC - British Library Document Supply CentreGBUnited Kingdo