The work presented in this thesis describes two main parts. The first part describes the implementation of a Deep Level Transient Spectroscopy (DLTS) system. This system was for use in the solid state group at Salford University for characterising deep levels in l-lll-VI_2 compounds, such as CulnSe_2 (CIS), which had been fabricated in the Electronic and Electrical Engineering Department. The system set-up, data processing and results for this developed system are presented. This system is then compared with a commercial DLTS equipment set-up (Bio-Rad DL4600) at UMIST, and the relative advantages and disadvantages compared. The second part concerns the characterisation of deep levels in as-grown p- and n-type CIS grown at Salford University...
We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undop...
SIGLEAvailable from British Library Document Supply Centre- DSC:D89774 / BLDSC - British Library Doc...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
The principles and theory behind deep level transient spectroscopy (DLTS) are examined in this thesi...
We report the results of a DLTS study on the majority carrier deep level structure of three samples ...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceThe goal of this work is to classify and systematically investigate the N1 Dee...
Deep Level Transient Spectroscopy (DLTS) is a technique to determine the electrical characteristics ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX171781 / BLDSC - British Library D...
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructu...
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructu...
Graduation date: 2003A primarily software based Fourier Deep Level Transient Spectroscope\ud (FDLTS)...
Defects in semiconductors have been studied extensively over the past few decades. The advent of hig...
We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undop...
SIGLEAvailable from British Library Document Supply Centre- DSC:D89774 / BLDSC - British Library Doc...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
The principles and theory behind deep level transient spectroscopy (DLTS) are examined in this thesi...
We report the results of a DLTS study on the majority carrier deep level structure of three samples ...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceOptimization of solar cells device and materials require a set of tools for th...
International audienceThe goal of this work is to classify and systematically investigate the N1 Dee...
Deep Level Transient Spectroscopy (DLTS) is a technique to determine the electrical characteristics ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX171781 / BLDSC - British Library D...
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructu...
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructu...
Graduation date: 2003A primarily software based Fourier Deep Level Transient Spectroscope\ud (FDLTS)...
Defects in semiconductors have been studied extensively over the past few decades. The advent of hig...
We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undop...
SIGLEAvailable from British Library Document Supply Centre- DSC:D89774 / BLDSC - British Library Doc...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...