This thesis presents a study of the electron-phonon interaction in two dimensional electron gases (2DEGs), by measuring of the acoustic phonon emission from a sequence of n-type doped GaAs/(AIGa)As quantum wells. Previous studies of emission from 2DEGs confined in GaAs heterojunctions (Chin et al., 1984) have shown a surprising absence of longitudinal acoustic (LA) mode phonon emission, in contrast with theoretical studies (Vass, 1987) which predict that deformation potential coupled LA mode emission should dominate the energy relaxation processes. This may be attributed to the finite width of the quasi-2D sheet, which imposes a restriction on the maximum emitted phonon wavevector component perpendicular to the 2DEG, leading to a suppressio...
We have observed both emission and absorption of phonons by the two-dimensional electron gas in a Ga...
The energy relaxation and the capture of free carriers in InxGa1—xAs/GaAs quantum wells have been in...
The interaction of electrons with interface phonons is predicted to be of major importance in narrow...
detected phonon emission energy spectra. This thesis presents a study of the electron-phonon interac...
This paper reviews some recent experiments in which heat pulse techniques have been used to study th...
We present a calculation of the electron optical-phonon scattering rates in GaAs/AlAs quantum wells,...
We have performed Raman scattering measurements and hot electron–neutral acceptor (hot(e, Å)) lumin...
Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy rel...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
The theory of generation of a heavy-hole exciton (2D exciton) from an electron-hole pair in a semico...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
The authors study the localization of acoustical modes within a two-dimensional electron gas (2DEG) ...
The electron–optical-phonon scattering rates in GaAs/AlAs quantum wells are calculated on the basis ...
At low temperatures the predominant energy loss mechanism for a Joule-heated two dimensional electro...
This thesis presents phonon pulse measurements of the electron-phonon interaction in semiconductor t...
We have observed both emission and absorption of phonons by the two-dimensional electron gas in a Ga...
The energy relaxation and the capture of free carriers in InxGa1—xAs/GaAs quantum wells have been in...
The interaction of electrons with interface phonons is predicted to be of major importance in narrow...
detected phonon emission energy spectra. This thesis presents a study of the electron-phonon interac...
This paper reviews some recent experiments in which heat pulse techniques have been used to study th...
We present a calculation of the electron optical-phonon scattering rates in GaAs/AlAs quantum wells,...
We have performed Raman scattering measurements and hot electron–neutral acceptor (hot(e, Å)) lumin...
Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy rel...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
The theory of generation of a heavy-hole exciton (2D exciton) from an electron-hole pair in a semico...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
The authors study the localization of acoustical modes within a two-dimensional electron gas (2DEG) ...
The electron–optical-phonon scattering rates in GaAs/AlAs quantum wells are calculated on the basis ...
At low temperatures the predominant energy loss mechanism for a Joule-heated two dimensional electro...
This thesis presents phonon pulse measurements of the electron-phonon interaction in semiconductor t...
We have observed both emission and absorption of phonons by the two-dimensional electron gas in a Ga...
The energy relaxation and the capture of free carriers in InxGa1—xAs/GaAs quantum wells have been in...
The interaction of electrons with interface phonons is predicted to be of major importance in narrow...