Add to ORKGAvailable from British Library Document Supply Centre-DSC:DXN052021 / BLDSC - British Library Document Supply CentreSIGLEGBUnited Kingdo
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN026212 / BLDSC - British Library D...
To study the gate oxide degradation under stress conditions closer to the actual operation of device...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN012842 / BLDSC - British Library D...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX184206 / BLDSC - British Library D...
10.1088/0268-1242/11/10/005Semiconductor Science and Technology11101381-1387SSTE
In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied...
Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k dev...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
This thesis will explore the various oxide degradations induced by the electric field stress in 51A ...
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is...
This paper reports on the permanent degradation of the electrical characteristics of GaAs-based HEMT...
A continued change of gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injec...
SIGLEAvailable from British Library Document Supply Centre-DSC:6029.280730(148) / BLDSC - British Li...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN026212 / BLDSC - British Library D...
To study the gate oxide degradation under stress conditions closer to the actual operation of device...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...
session posterInternational audienceThe HC degradation of nanoscale FD-SOI n-MOSFETs has been invest...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN012842 / BLDSC - British Library D...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX184206 / BLDSC - British Library D...
10.1088/0268-1242/11/10/005Semiconductor Science and Technology11101381-1387SSTE
In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied...
Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k dev...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
This thesis will explore the various oxide degradations induced by the electric field stress in 51A ...
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is...
This paper reports on the permanent degradation of the electrical characteristics of GaAs-based HEMT...
A continued change of gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injec...
SIGLEAvailable from British Library Document Supply Centre-DSC:6029.280730(148) / BLDSC - British Li...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN026212 / BLDSC - British Library D...
To study the gate oxide degradation under stress conditions closer to the actual operation of device...
Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and H...