Impact ionisation coefficients are measured in In_0_._5_3Ga_0_._4_7As and excess noise characteristics are measured in sub-micron ln_0_._5_2Al_0_._4_8As. Photomultiplication measurements performed on a series of In_0_._5_3Ga_0_._4_7As p-i-n diodes are reported. Taking careful account of factors which could give rise to erroneous results at low fields, ln_0_._5_3Ga_0_._4_7As ionisation coefficients are deduced at room temperature as a function of electric field. The results confirm the low field ionisation behaviour of #alpha# and the conventional field dependence of #beta#. Excess avalanche noise factors of In_0_._5_2Al_0_._4_8As p-i-n diodes, with i-region thicknesses ranging from 1.0#mu#m to 0.1#mu#m, are reported. The results indicate ef...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
Background and motivation: Avalanche Photodiodes are optoelectrical devices with an internal gain pr...
The aim of this work is to characterize the impact ionization characteristics of AlAs0.56Sb0.44 towa...
The best-fitted electron and hole impact ionisation coefficients are obtained and it is found that t...
A systematic study of the avalanche multiplication behaviour in InP has been performed on a series o...
This work is concerned with the measurement and interpretation of avalanche noise in avalanche photo...
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise ...
It is, by now, well known that McIntyre\u27s localized carrier-multiplication theory cannot explain ...
The aim of this work is to characterise and understand the impact ionisation characteristics of AlIn...
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ ...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
For applications requiring the detection of low light levels, avalanche photodiodes (APDs) are the p...
When the impact ionisation occurs in a region of high electric field in a photodiode, it results in ...
12noWe present a nonlocal history-dependent model for impact ionization gain and noise in avalanche ...
The effect of dead space on the mean gain, the excess noise factor, and the avalanche breakdown volt...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
Background and motivation: Avalanche Photodiodes are optoelectrical devices with an internal gain pr...
The aim of this work is to characterize the impact ionization characteristics of AlAs0.56Sb0.44 towa...
The best-fitted electron and hole impact ionisation coefficients are obtained and it is found that t...
A systematic study of the avalanche multiplication behaviour in InP has been performed on a series o...
This work is concerned with the measurement and interpretation of avalanche noise in avalanche photo...
The effects of impact ionization in the InGaAs absorption layer on the multiplication, excess noise ...
It is, by now, well known that McIntyre\u27s localized carrier-multiplication theory cannot explain ...
The aim of this work is to characterise and understand the impact ionisation characteristics of AlIn...
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ ...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
For applications requiring the detection of low light levels, avalanche photodiodes (APDs) are the p...
When the impact ionisation occurs in a region of high electric field in a photodiode, it results in ...
12noWe present a nonlocal history-dependent model for impact ionization gain and noise in avalanche ...
The effect of dead space on the mean gain, the excess noise factor, and the avalanche breakdown volt...
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for av...
Background and motivation: Avalanche Photodiodes are optoelectrical devices with an internal gain pr...
The aim of this work is to characterize the impact ionization characteristics of AlAs0.56Sb0.44 towa...