This thesis examines the electronic and structural properties of hydrogenated amorphous carbon (a-C:H) grown by plasma enhanced chemical vapour deposition (PECVD). The work covers both applied and fundamental aspects of the deposition process. Amorphous carbon has many important applications, in electronic terms its use as a dielectric is receiving greater attention. This is particularly important for application in magnetic head devices as a reader gap insulation layer, where breakdown strengths greater than 5MV/cm are required for 20-50nm films. An extensive study was undertaken to optimise the a-C:H films with respect to their electrical properties. Results presented for dielectric breakdown strength have shown that the required specific...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
This thesis is concerned with the growth, electronic properties and modification of hydrogenated amo...
temperature on GaAs, has been studied and concluded to be satisfactory on the basis of good adherenc...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
In this paper we report on the electrical and optical properties of amorphous carbon (a-C) and hydro...
grantor: University of TorontoThin hydrogenated amorphous carbon (a-C:H) films were grown ...
grantor: University of TorontoThin hydrogenated amorphous carbon (a-C:H) films were grown ...
This thesis is concerned with the electrical properties of the disordered amorphous material, amorph...
This thesis is concerned with the electrical properties of the disordered amorphous material, amorph...
Hydrogenated amorphous carbon (a-C:H) films have been grown from argon/methane gas mixtures by elect...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
This thesis is concerned with the growth, electronic properties and modification of hydrogenated amo...
temperature on GaAs, has been studied and concluded to be satisfactory on the basis of good adherenc...
The file attached to this record is the author's final peer reviewed version. The Publisher's final ...
In this paper we report on the electrical and optical properties of amorphous carbon (a-C) and hydro...
grantor: University of TorontoThin hydrogenated amorphous carbon (a-C:H) films were grown ...
grantor: University of TorontoThin hydrogenated amorphous carbon (a-C:H) films were grown ...
This thesis is concerned with the electrical properties of the disordered amorphous material, amorph...
This thesis is concerned with the electrical properties of the disordered amorphous material, amorph...
Hydrogenated amorphous carbon (a-C:H) films have been grown from argon/methane gas mixtures by elect...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...