Feasibility study on preamorphisation with Ge ions followed by RTA for junction depth control in silicon

Totterdell, D.H.J
Woods, T.A.
Harper, R.
Gardner, P.R.
Dearnaley, G.
Bishop, H.E.
Chivers, D.
UKAEA Atomic Energy Research Establishment, Harwell (United Kingdom)

Publication date

January 1986

Abstract

4.00SIGLEAvailable from British Library Document Supply Centre- DSC:9091.9F(AERE-R--12117) / BLDSC - British Library Document Supply CentreGBUnited Kingdo

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Feasibility study on preamorphisation with Ge ions followed by RTA for junction depth control in silicon

Abstract

Extracted data

Feasibility study on preamorphisation with Ge ions followed by RTA for junction depth control in silicon

Abstract

Extracted data

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