A new definition of the kilogram is being sought. A possibility is to relate the kilogram to an atomic mass, through the accurate measurement of the Avogadro constant. This approach is realised through spheres manufactured from extremely pure, single crystal silicon. One parameter to be determined is the bulk density of the silicon crystal. However, the measured density will include a contribution due to the surface oxide and any contaminants that are adsorbed onto a sphere's surface. Furthermore, the scale and structure of damage in the near surface region of the crystal (arising from the manufacturing process) may also significantly change the measured density. NPL has a project to manufacture and characterise the surface of such artefact...
A very large surface to volume ratio of nanoporous silicon (PS) produces a high density of surface s...
The much anticipated overhaul of the International System of Units (SI) will result in new definitio...
Most modern semiconductor device engineering takes place in the top micron of the host wafer and inv...
A new definition of the kilogram is being sought. One approach is to relate the kilogram to an atomi...
The new definition of the SI kilogram requires new methods of realizing this unit. The X-ray crystal...
This article deals with implementation of Scanning Probe Microscopy (SPM) techniques to the characte...
Bent crystals can be successfully applied for extraction/collimation of relativistic particles. A cr...
The industrial use of instruments based on Atomic Force Microscopy that started in the mid 1990's h...
This paper concerns an international research project aimed at determining the Avogadro constant by ...
Advances in semiconductor device manufacture have led to modern nanoelectronic devices incorporating...
The kilogram is the last of the seven base SI units that is defined as an artefact rather than a nat...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
Atomic force microscopy and x-ray scattering are applied to describe changes in the morphology of Si...
This paper concerns an international research project aimed at determining the Avogadro constant by ...
Abstract. The water affinity of Si-based surfaces is quantified by contact angle measurement and sur...
A very large surface to volume ratio of nanoporous silicon (PS) produces a high density of surface s...
The much anticipated overhaul of the International System of Units (SI) will result in new definitio...
Most modern semiconductor device engineering takes place in the top micron of the host wafer and inv...
A new definition of the kilogram is being sought. One approach is to relate the kilogram to an atomi...
The new definition of the SI kilogram requires new methods of realizing this unit. The X-ray crystal...
This article deals with implementation of Scanning Probe Microscopy (SPM) techniques to the characte...
Bent crystals can be successfully applied for extraction/collimation of relativistic particles. A cr...
The industrial use of instruments based on Atomic Force Microscopy that started in the mid 1990's h...
This paper concerns an international research project aimed at determining the Avogadro constant by ...
Advances in semiconductor device manufacture have led to modern nanoelectronic devices incorporating...
The kilogram is the last of the seven base SI units that is defined as an artefact rather than a nat...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
Atomic force microscopy and x-ray scattering are applied to describe changes in the morphology of Si...
This paper concerns an international research project aimed at determining the Avogadro constant by ...
Abstract. The water affinity of Si-based surfaces is quantified by contact angle measurement and sur...
A very large surface to volume ratio of nanoporous silicon (PS) produces a high density of surface s...
The much anticipated overhaul of the International System of Units (SI) will result in new definitio...
Most modern semiconductor device engineering takes place in the top micron of the host wafer and inv...