Investigación del efecto de la temperatura de recocido sobre las propiedades ópticas de películas delgadas de CdSe

Introduction: CdSe is an important II–VI semiconducting material dueto its typical optical properties such as small direct band gap (1.7 eV) anda high refractive index and, thus, a major concern is focused on the investigation of optical properties of CdSe thin films which is important topromote the performances of the devices of solid -state such as SC (solar cells), thin film transistors, LED (light-emitting diodes), EBPL (electron–beam pumped lasers) and electroluminescent devices. In the presentwork, CdSe thin films were deposited by thermal evaporation method andthe results have been analysed and presented. Materials and Methods:CdSe thin films has been deposited on glass microscopic slides as substrates of (75×25×1 mm) under room temperature using PVD technique.CdSe blended powders gets evaporated and condensed on the substrate.The film thickness (t = 100 5 nm) which is measured using Michelsoninterferometry method. Transmission spectrum, from 200-1100 nm, arescanned using two beams UV–VIS Spectrophotometer (6850 UV/Vis.Spectrophotometer-JENWAY). The deposited films then were annealedat temperature range of (1500C to 3500C) under vacuum to have a stable phase of the material and prevent surface oxidization. Results andDiscussion: A transmittance spectrum of CdSe thin film is scanned overwavelength range 200 to 1100 nm using a (6850 UV/Vis. Spectrophotometer-JENWAY) at room temperature. The transmittance percentagebetween the as-deposited film and the annealed films change varies from(17.0%) to (47.0%). It is clearly seen that there is a shift toward higher energy (Blue Shift) in the transmittance spectrum. As annealing temperatureincreased the transmittance edge is shifted to the longer wavelength (i.e.,after annealing the CdSe films shows red shifts in their optical spectra).The band gap was found within the range 1.966-1.7536 eV for CdSe thinfilm. As annealing temperature increases, the Eg continuously decreases.Conclusions: CdSe thin films have been deposited using Physical VaporDeposition (PVD) Technique. It is found that the transmission for asdeposited films is (17%) and increases to (47%) as annealing temperature increases. Beside this the energy gap for as- deposited CdSe film is(1.966eV) and decreased from (1.909 eV) to (1.7536eV) as the annealingtemperature increases. There is a strong red shift in optical spectrum ofthe annealed CdSe films. There is a gradual shift of the annealed filmsthin film spectra as compared of bulk CdSe film