International audienceWe present a theoretical and experimental analysis of photorefractive two-beam coupling in undoped GaAs as a function of temperature. The theoretical treatment includes the metastable state of the EL2 defect with its optical properties (optical generation and optical recovery) in the photorefractive model. Three major features are predicted by this model: First, a change of the sign of the photorefractive beam coupling gain around 150 K; second, an enhancement of the space-charge field by a factor of 2 compared to the diffusion field; and, finally, the appearance of a strong peak due to an absorption grating around 150 K. All these features are actually observed experimentally with a good correlation between experiment...
Spectroscopic and transport measurements on a variety of semi-insulating and n-type GaAs single crys...
It is shown that thermally stimulated photocurrent measurements provide a simple and effective metho...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
The enhanced infrared photorefractive effect in cubic crystal GaAs under externally applied electric...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
In this work we report the observation of two different EL2 metastable states in GaAs and the effect...
The phenomenon of two-stage photoquenching of EL2 defect in semi-insulating GaAs [V.Pandian and V. K...
International audienceWe present photorefractive measurements at 1.06 mgrm and 1.3 mgrm performed in...
We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encaps...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during h...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
In this paper is given first a description of the optical features related to EL2 observed in photoc...
The optical and electrical recovery processes of the metastable state of the EL2 defect artificially...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
A new and novel material system (low-temperature-grown AlGaAs/GaAs quantum wells) has been developed...
Spectroscopic and transport measurements on a variety of semi-insulating and n-type GaAs single crys...
It is shown that thermally stimulated photocurrent measurements provide a simple and effective metho...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
The enhanced infrared photorefractive effect in cubic crystal GaAs under externally applied electric...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
In this work we report the observation of two different EL2 metastable states in GaAs and the effect...
The phenomenon of two-stage photoquenching of EL2 defect in semi-insulating GaAs [V.Pandian and V. K...
International audienceWe present photorefractive measurements at 1.06 mgrm and 1.3 mgrm performed in...
We present studies of the photorefractive effect in nonphotorefractive orientations of liquid-encaps...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during h...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
In this paper is given first a description of the optical features related to EL2 observed in photoc...
The optical and electrical recovery processes of the metastable state of the EL2 defect artificially...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
A new and novel material system (low-temperature-grown AlGaAs/GaAs quantum wells) has been developed...
Spectroscopic and transport measurements on a variety of semi-insulating and n-type GaAs single crys...
It is shown that thermally stimulated photocurrent measurements provide a simple and effective metho...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...