DOIAbstract
Thin Al films are deposited onto glass substrates at 573 K in high vacuum. The electrical resistivity was measured in situ during and after film deposition, as a function of film thickness, annealing temperature and annealing time, for pure Al films, films deposited in an oxygen atmosphere and films deposited under vacuum and oxidized step by step. TCR was calculated as a function of film thickness. Fuchs-Sondheimer theory for electrical conduction was applied to the experimental results and the mean free path of the conduction electrons was calculated for the three series of the deposited Al films
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