This work investigates the technique of mass fabrication of nanowires on semiconductor InP (100) surfaces by low energy Ar+ ion beam bombardment. Systematic investigation shows that under some crucial experimental parameters, nanowire arrays of regular periodicity can be produced. An ambient Atomic Force Microscope was used in contact mode to examine the morphology of the irradiated InP surfaces. The chemical composition of the irradiated samples was characterized by X-ray Photoelectron Spectroscopy (XPS). The electronic structure of the fabricated nanowire arrays was jointly explored by Scanning Tunnelling Spectroscopy and XPS. The research shows that In enriched ripples and nanowires form under prolonged irradiation by Ar+ ions due to pre...
Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuv...
Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silico...
Nanomaterials often undergo unusual mechanical deformations compared to their bulk counterparts when...
PhD ThesisThis work investigates the technique of mass fabrication of nanowires on semiconductor In...
Doping of nanostructures, in particular semiconductor nanowires, during their synthesis is remarkabl...
Ion Irradiation is a technologically important technique to modify the surfaces. We have investigate...
Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowi...
A focused electron beam deposition process (FEBID) coupled with in-situ infrared pulsed laser assist...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low ...
Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuv...
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (1...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach ...
The topic of III-V nanowires is still, after more than two decades, a growing and lively research ar...
Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuv...
Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silico...
Nanomaterials often undergo unusual mechanical deformations compared to their bulk counterparts when...
PhD ThesisThis work investigates the technique of mass fabrication of nanowires on semiconductor In...
Doping of nanostructures, in particular semiconductor nanowires, during their synthesis is remarkabl...
Ion Irradiation is a technologically important technique to modify the surfaces. We have investigate...
Surface chemistry and electrical properties of InAs and InP III-V semiconductor nanowires and nanowi...
A focused electron beam deposition process (FEBID) coupled with in-situ infrared pulsed laser assist...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low ...
Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuv...
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (1...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Morphology of the top-down grown silicon nanowires obtained by metal-assisted wet-chemical approach ...
The topic of III-V nanowires is still, after more than two decades, a growing and lively research ar...
Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuv...
Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silico...
Nanomaterials often undergo unusual mechanical deformations compared to their bulk counterparts when...