International audienceTo qualify the feasibility of standard semiconductor materials and Schottky-barrier diodes (SBDs) for THz high-order harmonics generation and extraction, the noise-to-signal ratio is calculated by the Monte Carlo method. Heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonics extraction which are definitively superior to those of bulk materials
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
An extended analysis is presented for the excess noise of GaAs-Schottky-Diodes in a mm-waveguide-mix...
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) fo...
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effe...
This paper presents a simulation tool for the analysis and design of Schottky mixers which is able ...
The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Sc...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
This work presents an analysis of the electrical and the noise performances of a 2.5 THz mixer. Rel...
[EN]We investigate damped nonharmonic oscillations at terahertz frequencies observed in the current ...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory el...
We present a microscopic analysis of electronic noise in semiconductor unipolar structures based on ...
The results of Monte Carlo simulation of GaAs MOSFETs under impact ionization conditions in the cond...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
An extended analysis is presented for the excess noise of GaAs-Schottky-Diodes in a mm-waveguide-mix...
To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) fo...
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effe...
This paper presents a simulation tool for the analysis and design of Schottky mixers which is able ...
The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Sc...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
This work presents an analysis of the electrical and the noise performances of a 2.5 THz mixer. Rel...
[EN]We investigate damped nonharmonic oscillations at terahertz frequencies observed in the current ...
The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. Af...
Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory el...
We present a microscopic analysis of electronic noise in semiconductor unipolar structures based on ...
The results of Monte Carlo simulation of GaAs MOSFETs under impact ionization conditions in the cond...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
International audienceNanometer scale planar Schottky barrier diodes with realistic geometries have ...
An extended analysis is presented for the excess noise of GaAs-Schottky-Diodes in a mm-waveguide-mix...