International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for terrestrial applications. The technology sensitivity is analyzed with both quasi-monoenergetic neutron and proton experiments in an energy range from 14 to 180 MeV. Analytical and simulation based correction methods of the neutron cross section are presented and validated. Then, neutron and proton cross section are compared. Soft Error Rate (for the terrestrial neutron spectrum) calculated with either proton or quasi-monoenergetic neutron data are also presented and compare
In this work, the expected SEE rate in a generic model of a state-of-the-art SRAM memory was studied...
In the aerospace industry, commercial-off-the-shelf (COTS) static random access memories (SRAMs) are...
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop, ...
International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for t...
International audienceThis work investigates the sensitivity of bulk technologies in the terrestrial...
Experimental mono-energetic proton single-event upset (SEU) cross-sections of a 65 nm low core-volta...
Single event upset (SEU) is mainly caused by neutrons in the terrestrial environment. In addition, S...
This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) ...
International audienceThe approach of calibrating neutron environments through well-known Single Eve...
We describe an approach to calibrate Single Event Effect (SEE)-based detectors in monoenergetic fiel...
Single event effects (SEEs) in ground level and avionic applications are mainly induced by neutrons ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
As the dimensions and operating voltage of semiconductor devices are reduced, neutron-induced soft e...
In this work, the expected SEE rate in a generic model of a state-of-the-art SRAM memory was studied...
In the aerospace industry, commercial-off-the-shelf (COTS) static random access memories (SRAMs) are...
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop, ...
International audienceThis paper investigates the single event upset sensitivity of Bulk SRAMs for t...
International audienceThis work investigates the sensitivity of bulk technologies in the terrestrial...
Experimental mono-energetic proton single-event upset (SEU) cross-sections of a 65 nm low core-volta...
Single event upset (SEU) is mainly caused by neutrons in the terrestrial environment. In addition, S...
This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) ...
International audienceThe approach of calibrating neutron environments through well-known Single Eve...
We describe an approach to calibrate Single Event Effect (SEE)-based detectors in monoenergetic fiel...
Single event effects (SEEs) in ground level and avionic applications are mainly induced by neutrons ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
As the dimensions and operating voltage of semiconductor devices are reduced, neutron-induced soft e...
In this work, the expected SEE rate in a generic model of a state-of-the-art SRAM memory was studied...
In the aerospace industry, commercial-off-the-shelf (COTS) static random access memories (SRAMs) are...
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop, ...