Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate significant amounts of heat, which needs to be removed from the chip to ensure continued operation. Since IGBT chips are commonly mounted on a layered assembly structure which is in turn mounted onto a heat sink assembly, the thermal dissipation properties of the layered structure are crucial in keeping temperatures within operational boundaries. Traditionally, the selection of materials for the layered structure has been largely influenced by the thermal conductivity for heat dissipation, the similarity of the coefficient of thermal expansion for physical integrity of the structure and to a lesser extent, the weight of the material. These principles...
Currently, older power electronics and electrotechnics are improvement and at the same time developi...
<p> To characterize the thermal performance of high power insulated gate bipolar transistor(IGBT)mo...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate signific...
As an increasing attention towards sustainable development of energy and environment, the power elec...
With the increase of power level and integration in electric vehicle controllers, the heat flux of t...
Power devices such as IGBTs (Insulated Gate Bipolar Transistors) operate within a large temperature ...
The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The ...
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistormodules is c...
Nowadays, the electric power conversion from one form to another is necessary and important in our e...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
[Departement_IRSTEA]DS [TR1_IRSTEA]METHODO / MODELIXInternational audienceDue to the increasing comp...
The IGBT is well suited to medium power applications. The current trend is improving its possibiliti...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy ...
Currently, older power electronics and electrotechnics are improvement and at the same time developi...
<p> To characterize the thermal performance of high power insulated gate bipolar transistor(IGBT)mo...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate signific...
As an increasing attention towards sustainable development of energy and environment, the power elec...
With the increase of power level and integration in electric vehicle controllers, the heat flux of t...
Power devices such as IGBTs (Insulated Gate Bipolar Transistors) operate within a large temperature ...
The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The ...
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistormodules is c...
Nowadays, the electric power conversion from one form to another is necessary and important in our e...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
[Departement_IRSTEA]DS [TR1_IRSTEA]METHODO / MODELIXInternational audienceDue to the increasing comp...
The IGBT is well suited to medium power applications. The current trend is improving its possibiliti...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy ...
Currently, older power electronics and electrotechnics are improvement and at the same time developi...
<p> To characterize the thermal performance of high power insulated gate bipolar transistor(IGBT)mo...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...