Modelling of point and extended defects in Group IV semiconductors

In this thesis first-principles calculations of point and extended defects in diamond and silicon are reported. In single crystal diamond grown by chemical vapour deposition (CVD) dislocations are observed as mixed-type 45° and edge-type dislocations lying along with 1/2 Burgers vectors. Results are presented on the core structures, core energies and electrical properties of both types of dislocations and their interaction with nitrogen is investigated. Then the focus turns to the brown diamond problem. Despite concerted research efforts, the origin of the brown colouration of diamond is still under discussion. Recently, the attention was drawn to vacancy-related defects. Experiments on type IIa diamonds indicate that the brown colour is caused by vacancy-type extended defects, however the shape and size of these defects remained unclear. In this work, the structural, electrical and optical properties of large spherical vacancy clusters and thin vacancy disks are investigated by means of density functional theory and the calculations are compared with recent experimental measurements on brown diamond. High pressure high temperature treatment (HPHT) of brown type Ia diamonds above 2000°C results in the loss of the brown colour and the formation of nitrogen-vacancy defects. The generation of such defects requires a source of mobile vacancies during the annealing process. It is suggested that the vacancy cluster model described in this thesis can explain the observed annealing behaviour since the break-up of the clusters leads to a supersaturation of mobile vacancies which readily complex with substitutional nitrogen atoms present in the material. Therefore, the effect of HPHT treatment of brown type Ia diamond is investigated by studying the formation energies of common and rare defects and estimates of their equilibrium concentrations at different annealing stages are given. Finally, an open problem also involving nitrogen, but in a different group IV semiconductor is considered. In Czochralski-silicon, nitrogen-related shallow thermal donors are formed between 500 and 750°C. Until now the exact chemical composition and atomic structure of these defects are not well established. Here, it is shown that NO and NO_2 belong to the family of nitrogen-oxygen related shallow thermal donors. Based on the law of mass action the equilibrium defect concentrations are predicted. Finally, the theoretical results are compared to recent Fourier transform infrared (FTIR) spectroscopy measurements.EThOS - Electronic Theses Online ServiceEPSRC : DTCGBUnited Kingdo