In this thesis, monolithically integrated photonic devices for next generation optical telecommunications networks were investigated, namely semiconductor modelocked ring lasers and Mach-Zehnder interferometers operating at 1550 nm. Fabricated on the aluminium quaternary, the 2.3mm long passively mode-locked ring devices produced 1 ps pulses at a repetition rate of around 36GHz. It was found that the symmetrically placed dual saturable absorber configuration lead to the largest area of stable mode-locking, agreeing well with theoretical predictions in the literature. Optical harmonic injection mode-locking was found to improve the pulse timing stability, with a reduction in the radio frequency 3 dB linewidth from 1.4MHz down to 108 kHz, ind...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...
In this paper, a monolithically integrated similar to 1.55 mu m semiconductor laser in the fourth ha...
In this thesis, monolithically integrated photonic devices for next generation optical telecommunica...
Using monolithic integration technology we have designed and fabricated tunable lasers in the 1.5 µm...
In this paper, we theoretically study the impact of an intracavity filter based on a Mach-Zehnder in...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
The interest in semiconductor ring lasers (SRLs) has been steadily growing in the last few years bec...
We report a photonic chip comprising multiple colliding pulse mode-locked laser and delay line-assis...
An Optical Phase Lock Loop (OPLL) is a feedback control system that allows the phase stabilization o...
This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work ...
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, opera...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
International audienceWe report the experimental realization of a photonic oscillator based on dedic...
The design, fabrication and characterisation of monolithic passive colliding pulse mode-locked (CPM)...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...
In this paper, a monolithically integrated similar to 1.55 mu m semiconductor laser in the fourth ha...
In this thesis, monolithically integrated photonic devices for next generation optical telecommunica...
Using monolithic integration technology we have designed and fabricated tunable lasers in the 1.5 µm...
In this paper, we theoretically study the impact of an intracavity filter based on a Mach-Zehnder in...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
The interest in semiconductor ring lasers (SRLs) has been steadily growing in the last few years bec...
We report a photonic chip comprising multiple colliding pulse mode-locked laser and delay line-assis...
An Optical Phase Lock Loop (OPLL) is a feedback control system that allows the phase stabilization o...
This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work ...
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, opera...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
International audienceWe report the experimental realization of a photonic oscillator based on dedic...
The design, fabrication and characterisation of monolithic passive colliding pulse mode-locked (CPM)...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...
In this paper, a monolithically integrated similar to 1.55 mu m semiconductor laser in the fourth ha...