Magnetism and spin transport studies on indium tin oxide

This dissertation reports on a detailed systematic study of the investigation into using Indium Oxide based materials in next generation spin-transport electronic applications. Initial studies focused on the optimisation of the electrical properties of Indium Oxide (In2O3) and Tin(Sn)-doped Indium Oxide (ITO) thin films grown using DC magnetron sputtering. The manipulation of various deposition parameters allowed the electrical properties to be tuned effectively. With the desire to create multi-functional spintronic devices, a dilute magnetic oxide system is developed where the In2O3 and ITO matrices are doped with low levels of transition metals, in particular, Co. Using a number of characterisation techniques, the origins of the magnetic response in these thin films is explored in great detail. In particular, powerful probes such as x-ray and optical magnetic circular dichroism are utilised. The major finding from these investigations is that the magnetism does not necessarily emanate from the Co dopants alone. In fact, Co dopants give a strictly paramagnetic response, suggesting that the magnetism observed may be a result of polarised electrons in localised donor states in the In2O3 and ITO hosts. Therefore, we believe that the origins of magnetism in these films is related to a hybridisation and charge transfer of electrons from a broad donor/defect-derived impurity band to a band of unoccupied 3d states at the Fermi level. The emergence of a very weak magnetic signal in pure ITO raises further questions as to the true origins of the ferromagnetic behaviour and supports a defect-related mechanism. To explore the suitability of ITO for a future in spintronics further, the performance of some metal ferromagnet/oxide multilayered structures was investigated. The investigations revealed a significant contribution to both the magnetic and magnetotransport properties from a superparamagnetic component giving some insight into the importance of the quality of interfaces between the metal ferromagnet/oxide layers and heterostructures. Using a three-dimensional focused-ion beam etching technique to fabricate submicronspin-valve devices with ITO spacer layers, current-perpendicular-to-plane magnetoresistance measurements were carried out to estimate the spin diffusion length of ITO at room temperature. In conjunction with a simplified Valet-Fert model, a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6±1 nm in semiconducting ITO at room temperature was estimated. These findings imply that spin information can be conserved and transported through In2O3 and ITO even up to and beyond room temperature.EThOS - Electronic Theses Online ServiceEngineering and Physical Sciences Research CouncilScience and Technology Facilities CouncilGBUnited Kingdo