Thermal stability of silicon-carbide power diodes
- Buttay, Cyril
- Raynaud, Christophe
- Morel, Hervé
- Civrac, Gabriel
- Locatelli, Marie-Laure
- Morel, Florent
Publication date
March 2012
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceSilicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the model of a Merged PiN Schottky (MPS) SiC diode is presented, and its parameters are identified with experimental measurements. This model is then used to study the ruggedness of the diode regarding the thermal run-away phenomenon. Finally, it is shown that where a purely unipolar diode would be unstable, the MPS structure brings increased stability
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