The insulated gate bipolar transistor (IGBT) is arguably the most important device currently used in power conversion at medium to high levels. This thesis presents a detailed analysis of IGBT and freewheel diode operation in the context of inductive switching, which accounts for the majority of power conversion processes. In particular, the consequences of the device behaviour on device and circuit interaction are examined. The behaviour of one device is shown to be tightly coupled to that of the other device and the circuit elements during switching. Performance, reliability, efficiency and cost are all affected by design considerations arising from the interaction of switching devices in power converters. Thus there is an incentive to en...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The use of simulation tools is of great value in the process of developing new power electronics dev...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
This thesis presents a comprehensive analysis of the IGBTs, antiparallel diodes and IGBT power modul...
Abstract During the last few years, great progress in the development of a new power semiconductor d...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) perfor...
Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to r...
Analysis and systems design in power electronics must taking into account of specific complex phenom...
In this study, a comparison of various insulated gate bipolar transistor (IGBT) models for field-pro...
The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT t...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The use of simulation tools is of great value in the process of developing new power electronics dev...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
This thesis presents a comprehensive analysis of the IGBTs, antiparallel diodes and IGBT power modul...
Abstract During the last few years, great progress in the development of a new power semiconductor d...
Today’s power converter designs, especially in the automotive or the all-electrical aircraft industr...
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next gen...
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) perfor...
Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to r...
Analysis and systems design in power electronics must taking into account of specific complex phenom...
In this study, a comparison of various insulated gate bipolar transistor (IGBT) models for field-pro...
The paper analyzes the phenomena of appearance of overvoltage during the switching-off of the IGBT t...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power...
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching devi...
The use of simulation tools is of great value in the process of developing new power electronics dev...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...